Mid-infrared optical Hall effect measurements are used to determine the free charge carrier
parameters of an unintentionally doped wurtzite-structure c-plane oriented In 0.33 Ga 0.67 N
epitaxial layer. Room temperature electron effective mass parameters of
m⊥*=(0.205±0.013) m 0 and m∥*=(0.204±0.016) m 0 for polarization perpendicular and
parallel to the c-axis, respectively, were determined. The free electron concentration was
obtained as (1.7±0.2)× 10 19 cm− 3. Within our uncertainty limits, we detect no anisotropy for …