The transparent conducting oxide SnO 2 is a wide bandgap semiconductor that is easily n-
type doped and widely used in various electronic and optoelectronic applications.
Experimental reports of the electron mobility of this material vary widely depending on the
growth conditions and doping concentrations. In this work, we calculate the electron mobility
of SnO 2 from first principles to examine the temperature and doping concentration
dependence and to elucidate the scattering mechanisms that limit transport. We include both …