Electron tunneling spectroscopy study of traps in high-k gate dielectrics: Determination of physical locations and energy levels of traps
M Wang, W He, TP Ma - Applied Physics Letters, 2005 - pubs.aip.org
It will be demonstrated that the electron tunneling spectroscopy (ETS), obtained by taking
the second derivative of the current-voltage ( I–V) characteristic of a tunnel barrier, is an
effective technique to probe traps in ultra-thin gate dielectrics where significant tunneling
currents flow. By taking the electron tunneling spectra in both polarities, one can determine
the locations and energy levels of traps that appear in the ETS spectra. The procedure for
the above and the associated derivation will be presented. Examples are shown to …
the second derivative of the current-voltage ( I–V) characteristic of a tunnel barrier, is an
effective technique to probe traps in ultra-thin gate dielectrics where significant tunneling
currents flow. By taking the electron tunneling spectra in both polarities, one can determine
the locations and energy levels of traps that appear in the ETS spectra. The procedure for
the above and the associated derivation will be presented. Examples are shown to …
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