Electron irradiation of a 1.3‐μ m‐Ga In N As∕ Ga As multi-quantum-well heterostructure,
grown by molecular beam epitaxy and subsequently rapid-thermal annealed, is found to
induce much stronger photoluminescence than what is observed for an identical as-grown
sample upon annealing. Annealing of the irradiated sample also causes a small additional
spectral blueshift and reduces alloy potential energy fluctuations at the conduction band
minimum. These irradiation-related phenomena are accompanied by small but discernable …