Thermochromic Ge x V 1− x O 2+ y thin films have been deposited on Si (100) substrates by
means of reactive magnetron sputtering. The films were then characterized by Rutherford
backscattering spectrometry (RBS), four-point probe electrical resistivity measurements, X-
ray diffraction, and atomic force microscopy. From the temperature dependent resistivity
measurements, the effect of Ge doping on the semiconductor-to-metal phase transition in
vanadium oxide thin films was investigated. The transition temperature was shown to …