Ellipsometric study of polycrystalline silicon films prepared by low-pressure chemical vapor deposition
Polysilicon layers with thicknesses between 8 and 600 nm deposited by low-pressure
chemical vapor deposition at temperatures ranging from 560 to 640° C were characterized
by spectroscopic ellipsometry (SE) to determine the layer thicknesses and compositions
using multilayer optical models and the Bruggeman effective-medium approximation. The
dependence of the structural parameters on the layer thickness and deposition temperature
have been investigated. A better characterization of the polysilicon layer is achieved by …
chemical vapor deposition at temperatures ranging from 560 to 640° C were characterized
by spectroscopic ellipsometry (SE) to determine the layer thicknesses and compositions
using multilayer optical models and the Bruggeman effective-medium approximation. The
dependence of the structural parameters on the layer thickness and deposition temperature
have been investigated. A better characterization of the polysilicon layer is achieved by …
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