A graphene–silicon Schottky junction (GSJ), which has potentials of large-scale
manufacturing and integration, can bring new opportunities to Schottky solar cells for
photovoltaic (PV) power conversion. However, the essential power conversion limitation for
these devices lies in a small open-circuit voltage (⁠ V oc⁠), which depends on the Schottky
barrier height. In this study, we introduce an electromechanical method based on a
flexoelectric effect to enhance the PV efficiency in GSJ. By atomic force microscope (AFM) tip …