Epitaxial lateral overgrowth of high Al composition AlGaN alloys on deep grooved SiC substrates
Japanese journal of applied physics, 2005•iopscience.iop.org
Abstract Fully coalesced Al 0.93 Ga 0.07 N films were demonstrated by metalorganic
chemical vapor deposition on deep grooved SiC substrates. Lateral Al 0.93 Ga 0.07 N
growth was achieved at low V/III ratios during growth. The deep grooves enabled
coalescence despite of parasitic growth in the trenches. Dislocation reduction in the
overgrown regions of the films was observed by transition electron microscopy and atomic
force microscopy.
chemical vapor deposition on deep grooved SiC substrates. Lateral Al 0.93 Ga 0.07 N
growth was achieved at low V/III ratios during growth. The deep grooves enabled
coalescence despite of parasitic growth in the trenches. Dislocation reduction in the
overgrown regions of the films was observed by transition electron microscopy and atomic
force microscopy.
Abstract
Fully coalesced Al 0.93 Ga 0.07 N films were demonstrated by metalorganic chemical vapor deposition on deep grooved SiC substrates. Lateral Al 0.93 Ga 0.07 N growth was achieved at low V/III ratios during growth. The deep grooves enabled coalescence despite of parasitic growth in the trenches. Dislocation reduction in the overgrown regions of the films was observed by transition electron microscopy and atomic force microscopy.
iopscience.iop.org
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