[图书][B] Error characterization, channel modeling and coding for flash memories
V Taranalli - 2017 - search.proquest.com
2017•search.proquest.com
NAND Flash memories have become a widely used non-volatile data storage technology
and their application areas are expected to grow in the future with the advent of cloud
computing, big data and the internet-of-things. This has led to aggressive scaling down of
the NAND flash memory cell feature sizes and also increased adoption of flash memories
with multiple cell levels to increase the data storage density. These factors have adversely
affected the reliability of flash memories.
and their application areas are expected to grow in the future with the advent of cloud
computing, big data and the internet-of-things. This has led to aggressive scaling down of
the NAND flash memory cell feature sizes and also increased adoption of flash memories
with multiple cell levels to increase the data storage density. These factors have adversely
affected the reliability of flash memories.
Abstract
NAND Flash memories have become a widely used non-volatile data storage technology and their application areas are expected to grow in the future with the advent of cloud computing, big data and the internet-of-things. This has led to aggressive scaling down of the NAND flash memory cell feature sizes and also increased adoption of flash memories with multiple cell levels to increase the data storage density. These factors have adversely affected the reliability of flash memories.
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