Etching characteristics of TiN used as hard mask in dielectric etch process
M Darnon, T Chevolleau, D Eon, L Vallier… - Journal of Vacuum …, 2006 - pubs.aip.org
This study focuses on the etching characteristics of a TiN hard mask in terms of etch rate and
faceting when using a dielectric etch process. The etching experiments have been
performed on blanket wafers and patterned structures in an inductively coupled plasma
using a conventional CF 4∕ Ar based plasma. The etch rate and faceting of TiN have been
measured as a function of the plasma parameters (bias power and pressure) and also
plasma chemistries (Ar dilution and CH 2 F 2 addition). The TiN etch rate is about 30 nm …
faceting when using a dielectric etch process. The etching experiments have been
performed on blanket wafers and patterned structures in an inductively coupled plasma
using a conventional CF 4∕ Ar based plasma. The etch rate and faceting of TiN have been
measured as a function of the plasma parameters (bias power and pressure) and also
plasma chemistries (Ar dilution and CH 2 F 2 addition). The TiN etch rate is about 30 nm …
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