In this paper, we explore the possibility of using STT-RAM technology to completely replace DRAM in main memory. Our goal is to make STT-RAM performance comparable to DRAM while providing substantial power savings. Towards this goal, we first analyze the performance and energy of STT-RAM, and then identify key optimizations that can be employed to improve its characteristics. Specifically, using partial write and row buffer write bypass, we show that STT-RAM main memory performance and energy can be significantly improved. Our experiments indicate that an optimized, equal capacity STT-RAM main memory can provide performance comparable to DRAM main memory, with an average 60% reduction in main memory energy.