The study involves spectroscopic ellipsometry analysis of sputter deposited few layer MoS₂ grown on three different substrates (ITO coated glass, n-silicon and p-silicon) for diverse deposition time. We have investigated optical parameters such as refractive index, extinction coefficient and dielectric constant of MoS₂ layers in the visible region of electromagnetic spectrum. For such purpose of investigation we have involved Cauchy dispersion model (for the film deposited on n-silicon and p-silicon) and hybrid of Lorentz and Drude model (for the film deposited on ITO coated glass). Furthermore, comparative analysis at the diverse growth time of 5, 10, 15 and 20 min has been performed on the basis of optical parameters and surface morphology.