Evidence of atomic-scale arsenic clustering in highly doped silicon
Low temperature (675 C) epitaxial in situ doped Si layers (As, 1.5 at.%) were analyzed by
atom probe tomography (APT) to study clustering in a highly arsenic-doped silicon layer.
The spatial distribution of As atoms in this layer was obtained by APT, and the distance
distribution between first nearest neighbors between As atoms was studied. The result
shows that the distribution of As atoms is nonhomogeneous, indicating clustering. Those
clusters, homogeneously distributed in the volume, are found to be very small (a few atoms) …
atom probe tomography (APT) to study clustering in a highly arsenic-doped silicon layer.
The spatial distribution of As atoms in this layer was obtained by APT, and the distance
distribution between first nearest neighbors between As atoms was studied. The result
shows that the distribution of As atoms is nonhomogeneous, indicating clustering. Those
clusters, homogeneously distributed in the volume, are found to be very small (a few atoms) …