difference in stacking fault energy (SFE) while staying within specifications. Neutron
diffraction and scanning electron microscopy electron backscatter diffraction analysis were
used to quantify stacking fault widths and deformation twinning, respectively, during room
temperature straining. While the low-SFE SS exhibits much wider stacking faults (19 nm)
throughout deformation as compared to the high-SFE SS (12 nm), the difference in twinning …