Excitability of a semiconductor laser by a two-mode homoclinic bifurcation

HJ Wünsche, O Brox, M Radziunas, F Henneberger - Physical review letters, 2001 - APS
HJ Wünsche, O Brox, M Radziunas, F Henneberger
Physical review letters, 2001APS
We report on the preparation of optical excitability in a distributed feedback semiconductor
laser. The device integrates a single-mode laser and a 250 μ m long passive section with
cleaved facet. The phase of the light fed back from the passive section is tunable by current.
The theoretical analysis shows an ultimate hop between external cavity modes within every
phase cycle that is associated with a two-mode homoclinic bifurcation close to which the
system becomes excitable. This excitability is clearly demonstrated in the experimental …
Abstract
We report on the preparation of optical excitability in a distributed feedback semiconductor laser. The device integrates a single-mode laser and a 250 μ m long passive section with cleaved facet. The phase of the light fed back from the passive section is tunable by current. The theoretical analysis shows an ultimate hop between external cavity modes within every phase cycle that is associated with a two-mode homoclinic bifurcation close to which the system becomes excitable. This excitability is clearly demonstrated in the experimental response to optical injection comparing well with simulation calculations.
American Physical Society
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