Experimental study of LiNbO3 memristors for use in neuromorphic computing
This paper describes the fabrication and characterization of Lithium Niobate (LiNbO 3)
memristor devices that have the ability to be tuned to a specific resistance state within a
continuous resistance range. This is essential for programming neuromorphic systems
based on memristor crossbars in order to achieve best deep learning capability. The
memristor devices were formed using a 42 nm layer of LiNbO 3 sandwiched between two
metal electrodes. IV curves demonstrate a typical and repeatable memristor characteristic …
memristor devices that have the ability to be tuned to a specific resistance state within a
continuous resistance range. This is essential for programming neuromorphic systems
based on memristor crossbars in order to achieve best deep learning capability. The
memristor devices were formed using a 42 nm layer of LiNbO 3 sandwiched between two
metal electrodes. IV curves demonstrate a typical and repeatable memristor characteristic …
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