Fabrication and characterization of high quality undoped and Ga2O3-doped ZnO thin films by reactive electron beam co-evaporation technique
R Al Asmar, S Juillaguet, M Ramonda, A Giani… - Journal of Crystal …, 2005 - Elsevier
High-quality undoped and Ga2O3-doped ZnO thin films have been co-evaporated by
reactive electron beam evaporation in an oxygen environment. The effect of the dopant on
the structural, optical and electrical properties has been investigated. X-ray diffraction
measurements have shown that the Ga2O3-doped ZnO films are c-axis-oriented and that the
linewidth of the (002) peak is sensitive to the variation of the dopant concentration. The 28%
Ga2O3-doped ZnO films showed the best crystallinity. The AFM images have shown that the …
reactive electron beam evaporation in an oxygen environment. The effect of the dopant on
the structural, optical and electrical properties has been investigated. X-ray diffraction
measurements have shown that the Ga2O3-doped ZnO films are c-axis-oriented and that the
linewidth of the (002) peak is sensitive to the variation of the dopant concentration. The 28%
Ga2O3-doped ZnO films showed the best crystallinity. The AFM images have shown that the …
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