Phase pure Cu₂ZnSnS₄ thin films were fabricated by simple dip coating technique. Precursor films were coated onto glass substrates using stable solutions of copper, zinc and tin dissolved in 2 methoxyethanol and monoethanolamine. These precursor films were sulphurized in N₂ + H₂S atmosphere at different temperatures ranging from 400 °C to 600 °C. XRD analysis and Raman studies revealed a single CZTS phase for the films sulphurised at 500 °C and 550 °C, but good crystallinity was observed for the film sulphurized at 550 °C. Rietveld method was used for structural refinement. SEM and FESEM studies indicate good surface morphology and large grains in the film sulphurized at 550 °C. The film exhibited an optical absorption coefficient of >10⁴cm⁻¹ and an optical band gap of 1.4 eV. The carrier concentration, resistivity and mobility are 1.434 × 10¹⁸ cm⁻³, 5.3 cm²/Vs and 0.828 Ωcm, respectively and the conduction is p-type. The photovoltaic properties are suitable for thin film solar cell fabrication.