Faceting evolution during self-assembling of InAs/InP quantum wires
HR Gutiérrez, MA Cotta, MMG De Carvalho - Applied Physics Letters, 2001 - pubs.aip.org
The self-assembling of InAs quantum wires on (001) InP substrates during chemical beam
epitaxy has been studied. The samples were characterized by reflection high-energy
electron diffraction (RHEED), atomic force microscopy, and high-resolution transmission
electron microscopy (HRTEM). By monitoring the RHEED chevron structures along the
[11̄0] direction, we studied the facets formation during the initial states of InAs growth. The
facets angles measured by HRTEM are in perfect agreement with the angles between …
epitaxy has been studied. The samples were characterized by reflection high-energy
electron diffraction (RHEED), atomic force microscopy, and high-resolution transmission
electron microscopy (HRTEM). By monitoring the RHEED chevron structures along the
[11̄0] direction, we studied the facets formation during the initial states of InAs growth. The
facets angles measured by HRTEM are in perfect agreement with the angles between …
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