A systematic review, covering the aspects of material preparation, device fabrication and process integration, is provided for flexible electronics operating in high-frequency domain based on transferrable monocrystalline silicon (Si) nanomembranes (NM). Previously demonstrated methods of releasing Si NM from silicon-on-insulator source substrates and transferring it to flexible substrates are briefly described. Due to the processing temperature limitation of most flexible substrates, a pre-release NM selective doping scheme is used for Si NMs. With proper selections of ion implantation energy and dose, fully doped Si NMs across their entire thickness with very low sheet resistivity can be obtained, allowing flip transfer of the NMs for backside and even double side processing. A general conclusion of preferred low implantation energy for shallower depth ion implantation is identified. The evolvement of radio frequency (RF) flexible Si thin-film transistor (TFT) structures is described in detail. The continuous performance enhancement of TFTs owing to process and TFT structure innovations is analysed. Demonstrations of flexible Si RF switches and RF inductors and capacitors are also briefly reviewed as valuable components of the general flexible device family, some of which also benefit from the pre-release NM doping technique. With the proved feasibility of these basic RF elements and related processing techniques, more complicated flexible RF circuits can be expected. Future research directions are also discussed, including further enhancement of device performance, building more types of semiconductor devices on flexible substrates, and process integration for flexible circuits and systems.