Ferromagnetic semiconductor (in, ga, mn) as with curie temperature above 100 k
T Slupinski, H Munekata, A Oiwa - Applied physics letters, 2002 - pubs.aip.org
We have grown (In y Ga 1− y) 1− x Mn x As ferromagnetic semiconductor layers with Mn
composition of x up to 0.13 on InP substrates by molecular beam epitaxy. Near the lattice-
matched composition, ie, y∼ 0.53, the Curie temperature increases linearly with the
ferromagnetically effective Mn composition x eff, following the empirical equation TC= 1300×
x eff. We obtained Curie temperatures above 100 K when x is relatively high (x> 0.1; x eff⩾
0.08) and the hole concentration is of the order of 10 19 cm− 3.
composition of x up to 0.13 on InP substrates by molecular beam epitaxy. Near the lattice-
matched composition, ie, y∼ 0.53, the Curie temperature increases linearly with the
ferromagnetically effective Mn composition x eff, following the empirical equation TC= 1300×
x eff. We obtained Curie temperatures above 100 K when x is relatively high (x> 0.1; x eff⩾
0.08) and the hole concentration is of the order of 10 19 cm− 3.
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