stacked Nanosheet device structures with Lmetal 12 nm. The comparison of full BDI scheme
vs punch through stopper (PTS) scheme has been systematically studied. By comparing off-
state leakage current, short channel behavior and effective capacitance (Ceff) for both
schemes, we show that BDI could potentially provide: 1) good immunity of sub-channel
leakage due to process variation (from parasitic" fat-Fin" which is unique in Nanosheet …