[PDF][PDF] Fully recessed Schottky barrier diodes with a digital etching on AlGaN/GaN heterostructures
An effective digital etching technique and its application on fully recessed Schottky barrier
diode (SBD) are described in this paper. Etch rate and roughness of the digitally etched Al0.
25GaN surface were 0.6 nm/cycle and 0.58-nm which is almost identical with a non-
recessed surface. Hall-effect measurement revealed a negligible damage on GaN surface
was generated after digital etching. Fabricated SBD with a digital etching showed an
improved Schottky contact which has ideality factor of 1.19 and Schottky barrier height of …
diode (SBD) are described in this paper. Etch rate and roughness of the digitally etched Al0.
25GaN surface were 0.6 nm/cycle and 0.58-nm which is almost identical with a non-
recessed surface. Hall-effect measurement revealed a negligible damage on GaN surface
was generated after digital etching. Fabricated SBD with a digital etching showed an
improved Schottky contact which has ideality factor of 1.19 and Schottky barrier height of …
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