target. The GaONWs, with mean diameter around 60nm, are of monocrystalline nature with
length up to 100μm, and identified to be monoclinic Ga2O3 with space group of C2/m. The
growth of the GaONWs is not controlled by the well-known vapor–liquid–solid (VLS)
mechanism, instead they are seemingly grown via a vapor–solid (VS) process, in which the
structural defects play an important role both during the nucleation and the preferable axial …