Oxides induced Fermi level pinning at the interface between the GaAs and high-k gate
dielectric is a major obstacle for developing high performance GaAs metal-oxide-
semiconductor (MOS) devices. In this letter, thermal nitridation treatment on GaAs surface
prior to the high-k deposition is proposed to solve the issue of interface pinning. It is found
that an optimized nitride layer formed during the thermal nitridation surface treatment can
effectively suppress the oxides formation and minimize the Fermi level pinning at the …