GaInNAs/GaAs quantum dots grown by chemical beam epitaxy
S Makino, T Miyamoto, T Kageyama, N Nishiyama… - Journal of crystal …, 2000 - Elsevier
GaInNAs/GaAs quantum dot (QD) structure is expected to be one of the novel materials to
extend the emission wavelength of GaAs-based lasers. In this work, we have grown
GaInNAs QDs by chemical beam epitaxy (CBE) with nitrogen radicals for the first time. The
effect of nitrogen (N) introduction to the QD formation was investigated. We found that the dot
density and size were strongly influenced by the supplied N quantity for the N composition
up to 1.5%. The maximum dot density of 1.2× 1011cm− 2 was obtained at 1% of N …
extend the emission wavelength of GaAs-based lasers. In this work, we have grown
GaInNAs QDs by chemical beam epitaxy (CBE) with nitrogen radicals for the first time. The
effect of nitrogen (N) introduction to the QD formation was investigated. We found that the dot
density and size were strongly influenced by the supplied N quantity for the N composition
up to 1.5%. The maximum dot density of 1.2× 1011cm− 2 was obtained at 1% of N …
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