GaInP window layers for GaAsP on SiGe/Si single and dual-junction solar cells
KJ Schmieder, A Gerger, Z Pulwin… - 2013 IEEE 39th …, 2013 - ieeexplore.ieee.org
2013 IEEE 39th Photovoltaic Specialists Conference (PVSC), 2013•ieeexplore.ieee.org
GaAsP solar cells have been grown on Si substrates facilitated by a SiGe graded buffer
layer. Here, single-junction p+/n GaAsP and tandem n+/p GaAsP/SiGe solar cells are
reported with an interest in improving efficiency by evaluation of the III-V device passivation
layers and pathways to their optimization. Solar cells with varying window thicknesses are
reported for both structures and assist in directing focus of future research. The GaAsP/SiGe
on Si tandem solar cell demonstrates a result towards AM1. 5G 20.8% AR-corrected …
layer. Here, single-junction p+/n GaAsP and tandem n+/p GaAsP/SiGe solar cells are
reported with an interest in improving efficiency by evaluation of the III-V device passivation
layers and pathways to their optimization. Solar cells with varying window thicknesses are
reported for both structures and assist in directing focus of future research. The GaAsP/SiGe
on Si tandem solar cell demonstrates a result towards AM1. 5G 20.8% AR-corrected …
GaAsP solar cells have been grown on Si substrates facilitated by a SiGe graded buffer layer. Here, single-junction p+/n GaAsP and tandem n+/p GaAsP/SiGe solar cells are reported with an interest in improving efficiency by evaluation of the III-V device passivation layers and pathways to their optimization. Solar cells with varying window thicknesses are reported for both structures and assist in directing focus of future research. The GaAsP/SiGe on Si tandem solar cell demonstrates a result towards AM1.5G 20.8% AR-corrected efficiency.
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