Gate current: Modeling,/spl Delta/L extraction and impact on RF performance
R Van Langevelde, AJ Scholten, R Duffy… - … Digest (Cat. No …, 2001 - ieeexplore.ieee.org
R Van Langevelde, AJ Scholten, R Duffy, FN Cubaynes, MJ Knitel, DBM Klaassen
International Electron Devices Meeting. Technical Digest (Cat. No …, 2001•ieeexplore.ieee.orgIn this paper a new physical gate leakage model is introduced, which is both accurate and
simple. It only uses 5 parameters, making parameter extraction straightforward. As a result
the model can be used to extract effective length for modern CMOS technologies. The
influence of gate current on the RF performance is studied.
simple. It only uses 5 parameters, making parameter extraction straightforward. As a result
the model can be used to extract effective length for modern CMOS technologies. The
influence of gate current on the RF performance is studied.
In this paper a new physical gate leakage model is introduced, which is both accurate and simple. It only uses 5 parameters, making parameter extraction straightforward. As a result the model can be used to extract effective length for modern CMOS technologies. The influence of gate current on the RF performance is studied.
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