Gate-tunable antiferromagnetic Chern insulator in twisted bilayer transition metal dichalcogenides

X Liu, Y He, C Wang, XW Zhang, T Cao, D Xiao - Physical Review Letters, 2024 - APS
Physical Review Letters, 2024APS
A series of recent experimental works on twisted MoTe 2 homobilayers have unveiled an
abundance of exotic states in this system. Valley-polarized quantum anomalous Hall states
have been identified at hole doping of ν=-1, and the fractional quantum anomalous Hall
effect is observed at ν=-2/3 and ν=-3/5. In this Letter, we investigate the electronic properties
of AA-stacked twisted bilayer MoTe 2 at ν=-2 by k-space Hartree-Fock calculations. We
identify a series of phases, among which a noteworthy phase is the antiferromagnetic Chern …
A series of recent experimental works on twisted homobilayers have unveiled an abundance of exotic states in this system. Valley-polarized quantum anomalous Hall states have been identified at hole doping of , and the fractional quantum anomalous Hall effect is observed at and . In this Letter, we investigate the electronic properties of AA-stacked twisted bilayer at by -space Hartree-Fock calculations. We identify a series of phases, among which a noteworthy phase is the antiferromagnetic Chern insulator, stabilized by an external electric field. We attribute the existence of this Chern insulator to an antiferromagnetic instability at a topological phase transition between the quantum spin hall phase and a band insulator phase. Our research proposes the potential of realizing a Chern insulator beyond , and contributes fresh perspectives on the interplay between band topology and electron-electron correlations in moiré superlattices.
American Physical Society
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