Giant tunneling magnetoresistance effect in low-resistance CoFeB∕ MgO (001)∕ CoFeB magnetic tunnel junctions for read-head applications

K Tsunekawa, DD Djayaprawira, M Nagai… - Applied Physics …, 2005 - pubs.aip.org
The giant tunneling magnetoresistance effect has been achieved in low-resistance CoFeB∕
MgO (001)∕ CoFeB magnetic tunnel junctions (MTJs) at room temperature. A
magnetoresistance (MR) ratio as high as 138%, seven times that of state-of-the-art MTJs for
magnetic sensor application, was obtained at room temperature in MTJs with a resistance-
area product (RA) as low as 2.4 Ω μ m 2⁠. Such a high MR ratio at such a low resistance
was made possible by introducing an ultrathin Mg metal layer with a thickness of 4 Å …

[引用][C] 論文紹介Giant tunneling magnetoresistance effect in low-resistance CoFeB/MgO (001)/CoFeB magnetic tunnel junctions for read-head applications

K Tsunekawa, DD Djayaprawira, M Nagai - キヤノンアネルバ技報, 2006 - cir.nii.ac.jp
論文紹介Giant tunneling magnetoresistance effect in low-resistance CoFeB/MgO(001)/CoFeB
magnetic tunnel junctions for read-head applications | CiNii Research … 論文紹介Giant
tunneling magnetoresistance effect in low-resistance CoFeB/MgO(001)/CoFeB magnetic
tunnel junctions for read-head applications … ロンブンショウカイGiant tunneling
magnetoresistance effect in low resistance CoFeB MgO 001 CoFeB magnetic tunnel
junctions for read head applications …
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