GigaRad total ionizing dose and post-irradiation effects on 28 nm bulk MOSFETs
The DC performance of both n-and pMOSFETs fabricated in a commercial-grade 28 nm bulk
CMOS process has been studied up to 1 Grad of total ionizing dose and at post-irradiation
annealing. The aim is to assess the potential use of such an advanced CMOS technology in
the forthcoming upgrade of the Large Hadron Collider at CERN. The total ionizing dose
effects show limited influence in the drive current of all the tested nMOSFETs. Nonetheless,
the leakage current increases significantly, affecting the normal device operation of the …
CMOS process has been studied up to 1 Grad of total ionizing dose and at post-irradiation
annealing. The aim is to assess the potential use of such an advanced CMOS technology in
the forthcoming upgrade of the Large Hadron Collider at CERN. The total ionizing dose
effects show limited influence in the drive current of all the tested nMOSFETs. Nonetheless,
the leakage current increases significantly, affecting the normal device operation of the …
IEEE: GigaRad total ionizing dose and post-irradiation effects on 28 nm bulk MOSFETs
CM Zhang, A Pezzotta, S Mattiazzo, G Borghello… - 2017 - cds.cern.ch
The DC performance of both $ n $-and $ p $ MOSFETs fabricated in a commercial-grade 28
nm bulk CMOS process has been studied up to 1 Grad of total ionizing dose and at post-
irradiation annealing. The aim is to assess the potential use of such an advanced CMOS
technology in the forthcoming upgrade of the Large Hadron Collider at CERN. The total
ionizing dose effects show limited influence in the drive current of all the tested nMOSFETs.
Nonetheless, the leakage current increases significantly, affecting the normal device …
nm bulk CMOS process has been studied up to 1 Grad of total ionizing dose and at post-
irradiation annealing. The aim is to assess the potential use of such an advanced CMOS
technology in the forthcoming upgrade of the Large Hadron Collider at CERN. The total
ionizing dose effects show limited influence in the drive current of all the tested nMOSFETs.
Nonetheless, the leakage current increases significantly, affecting the normal device …
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