[HTML][HTML] Growth and characterization of GaAs1− x− ySbxNy/GaAs heterostructures for multijunction solar cell applications
A Maros, N Faleev, RR King… - Journal of Vacuum Science …, 2016 - pubs.aip.org
The GaAsSbN dilute-nitride alloy can be grown lattice-matched to GaAs with a bandgap of 1
eV, making it an ideal candidate for use in multijunction solar cells. In this work, using
molecular beam epitaxy in conjunction with a radio-frequency nitrogen plasma source, the
authors focus first on the growth optimization of the GaAsSb and GaAsN alloys in order to
calibrate the Sb and N compositions independently of each other. After the optimum growth
conditions to maintain two-dimensional growth were identified, the growth of GaAsSbN films …
eV, making it an ideal candidate for use in multijunction solar cells. In this work, using
molecular beam epitaxy in conjunction with a radio-frequency nitrogen plasma source, the
authors focus first on the growth optimization of the GaAsSb and GaAsN alloys in order to
calibrate the Sb and N compositions independently of each other. After the optimum growth
conditions to maintain two-dimensional growth were identified, the growth of GaAsSbN films …
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