Growth and phase transition characteristics of pure M-phase VO2 epitaxial film prepared by oxide molecular beam epitaxy
LL Fan, S Chen, YF Wu, FH Chen, WS Chu… - Applied Physics …, 2013 - pubs.aip.org
VO 2 epitaxial film with large size has been prepared by oxide-molecular beam epitaxy
method on Al 2 O 3 (0001) substrate. The VO 2 film shows a perfect crystal orientation,
uniformity, and distinct metal-insulator phase transition (MIT) characteristics. It is observed
that the MIT character is closely associated with the crystal defects such as oxygen
vacancies. By controlling the growth condition, the MIT temperature can be tuned through
modifying the content of oxygen vacancies. The role of the oxygen vacancies on the phase …
method on Al 2 O 3 (0001) substrate. The VO 2 film shows a perfect crystal orientation,
uniformity, and distinct metal-insulator phase transition (MIT) characteristics. It is observed
that the MIT character is closely associated with the crystal defects such as oxygen
vacancies. By controlling the growth condition, the MIT temperature can be tuned through
modifying the content of oxygen vacancies. The role of the oxygen vacancies on the phase …
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