Growth and structural properties of crystalline LaAlO3 on Si (0 0 1)
Crystalline LaAlO3 was grown by oxide molecular beam epitaxy (MBE) on Si (001) surfaces
utilizing a 2ML SrTiO3 buffer layer. This SrTiO3 buffer layer, also grown by oxide MBE,
formed an abrupt interface with the silicon. No SiO2 layer was detectable at the oxide–
silicon interface when studied by cross-sectional transmission electron microscopy. The
crystalline quality of the LaAlO3 was assessed during and after growth by reflection high
energy electron diffraction, indicating epitaxial growth with the LaAlO3 unit cell rotated 45° …
utilizing a 2ML SrTiO3 buffer layer. This SrTiO3 buffer layer, also grown by oxide MBE,
formed an abrupt interface with the silicon. No SiO2 layer was detectable at the oxide–
silicon interface when studied by cross-sectional transmission electron microscopy. The
crystalline quality of the LaAlO3 was assessed during and after growth by reflection high
energy electron diffraction, indicating epitaxial growth with the LaAlO3 unit cell rotated 45° …
以上显示的是最相近的搜索结果。 查看全部搜索结果