Growth of BGaN epitaxial layers using close‐coupled showerhead MOCVD
physica status solidi (b), 2015•Wiley Online Library
BGaN epilayers were grown on GaN/sapphire templates in hydrogen atmosphere by metal
organic chemical vapor deposition (MOCVD). The growth was attempted at different
temperatures and flow rates of triethylboron, which was used as boron precursor. According
to XRD measurements, up to 2.9% of boron was incorporated in 500 nm‐thick BGaN layers
deposited at 870° C. Comparison of XRD results with the red shift observed in the
photoluminescence band with increasing boron content confirms an extremely large value …
organic chemical vapor deposition (MOCVD). The growth was attempted at different
temperatures and flow rates of triethylboron, which was used as boron precursor. According
to XRD measurements, up to 2.9% of boron was incorporated in 500 nm‐thick BGaN layers
deposited at 870° C. Comparison of XRD results with the red shift observed in the
photoluminescence band with increasing boron content confirms an extremely large value …
Abstract
BGaN epilayers were grown on GaN/sapphire templates in hydrogen atmosphere by metal organic chemical vapor deposition (MOCVD). The growth was attempted at different temperatures and flow rates of triethylboron, which was used as boron precursor. According to XRD measurements, up to 2.9% of boron was incorporated in 500 nm‐thick BGaN layers deposited at 870 °C. Comparison of XRD results with the red shift observed in the photoluminescence band with increasing boron content confirms an extremely large value of ∼10 eV for the bowing parameter in BGaN.
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