Growth of silicon nanowires by chemical vapor deposition: approach by charged cluster model
Silicon nanowires can be grown by chemical vapor deposition. Using a SiH4: HCl: H2 gas
ratio of 3: 1: 96, a pressure of 1333Pa, a substrate temperature of 1223K and radiant heating
by a halogen lamp, an appreciable quantity of silicon nanowires formed on Si, SiO2 and
Si3N4 substrates while on a Mo substrate, a silicon film deposited. An increase in the
pressure to 13332Pa led to a deterioration in nanowire growth. Using a hot filament at
2073K suppressed nanowire growth but resulted in deposition of a normal silicon film. The …
ratio of 3: 1: 96, a pressure of 1333Pa, a substrate temperature of 1223K and radiant heating
by a halogen lamp, an appreciable quantity of silicon nanowires formed on Si, SiO2 and
Si3N4 substrates while on a Mo substrate, a silicon film deposited. An increase in the
pressure to 13332Pa led to a deterioration in nanowire growth. Using a hot filament at
2073K suppressed nanowire growth but resulted in deposition of a normal silicon film. The …
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