Hard x-ray photoelectron spectroscopy study of the buried Si/ZnO thin-film solar cell interface: Direct evidence for the formation of Si–O at the expense of Zn-O bonds
The chemical structure of the interface between silicon thin films and the transparent
conductive oxide ZnO: Al has been investigated by hard x-ray photoelectron spectroscopy.
By varying the excitation energy between 2010 and 8040 eV, we were able to probe the
Si/ZnO interface buried below 12 nm Si. This allowed for the identification of changes
induced by solid phase crystallization (SPC). Based on in-situ SPC annealing experiments,
we find clear indications that the formation of Si–O bonds takes place at the expense of Zn …
conductive oxide ZnO: Al has been investigated by hard x-ray photoelectron spectroscopy.
By varying the excitation energy between 2010 and 8040 eV, we were able to probe the
Si/ZnO interface buried below 12 nm Si. This allowed for the identification of changes
induced by solid phase crystallization (SPC). Based on in-situ SPC annealing experiments,
we find clear indications that the formation of Si–O bonds takes place at the expense of Zn …
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