High quality AlGaN grown on ELO AlN/sapphire templates
U Zeimer, V Kueller, A Knauer, A Mogilatenko… - Journal of crystal …, 2013 - Elsevier
The defect structure and the homogeneity of 1–3 µm thick Al x Ga 1− x N layers grown on
epitaxially laterally overgrown (ELO) AlN on patterned AlN/sapphire templates have been
investigated in dependence on the miscut direction of the c-plane sapphire substrates, the
etching depth into the sapphire and the Al concentration. It was found that shallowly etched
AlN/sapphire templates with a 0.25° miscut toward the a-plane provide a smooth surface of
ELO AlN and therefore a good Al homogeneity in the overgrown Al 0.8 Ga 0.2 N layer. The …
epitaxially laterally overgrown (ELO) AlN on patterned AlN/sapphire templates have been
investigated in dependence on the miscut direction of the c-plane sapphire substrates, the
etching depth into the sapphire and the Al concentration. It was found that shallowly etched
AlN/sapphire templates with a 0.25° miscut toward the a-plane provide a smooth surface of
ELO AlN and therefore a good Al homogeneity in the overgrown Al 0.8 Ga 0.2 N layer. The …
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