High quality GaAs on Si by conformal growth
We propose a simple technique which allows the growth of low defect density GaAs films on
Si substrates. This technique is based on conformal vapor phase epitaxy and uses a Si3N4
capping layer, as well as the Si surface itself for growth confinement. The as‐grown
conformal GaAs films exhibit a spectacular reduction in the density of dislocations, because
of the latter blocking either on the Si3N4 cap or on the Si substrate. Dislocation densities
below 5× 105 cm− 2 have been obtained in submicrometer‐thick conformal GaAs films.
Si substrates. This technique is based on conformal vapor phase epitaxy and uses a Si3N4
capping layer, as well as the Si surface itself for growth confinement. The as‐grown
conformal GaAs films exhibit a spectacular reduction in the density of dislocations, because
of the latter blocking either on the Si3N4 cap or on the Si substrate. Dislocation densities
below 5× 105 cm− 2 have been obtained in submicrometer‐thick conformal GaAs films.
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