High speed GeSi electro-absorption modulator at 1550 nm wavelength on SOI waveguide
Optics express, 2012•opg.optica.org
We demonstrate a high speed GeSi electro-absorption (EA) modulator monolithically
integrated on 3 µm silicon-on-insulator (SOI) waveguide. The demonstrated device has a
compact active region of 1.0× 55 μm^ 2, an insertion loss of 5 dB and an extinction ratio of 6
dB at wavelength of 1550 nm. The modulator has a broad operating wavelength range of 35
nm and a 3 dB bandwidth of 40.7 GHz at 2.8 V reverse bias. This compact and energy
efficient modulator is a key building block for optical interconnection applications.
integrated on 3 µm silicon-on-insulator (SOI) waveguide. The demonstrated device has a
compact active region of 1.0× 55 μm^ 2, an insertion loss of 5 dB and an extinction ratio of 6
dB at wavelength of 1550 nm. The modulator has a broad operating wavelength range of 35
nm and a 3 dB bandwidth of 40.7 GHz at 2.8 V reverse bias. This compact and energy
efficient modulator is a key building block for optical interconnection applications.
We demonstrate a high speed GeSi electro-absorption (EA) modulator monolithically integrated on 3 µm silicon-on-insulator (SOI) waveguide. The demonstrated device has a compact active region of 1.0 × 55 μm^2, an insertion loss of 5 dB and an extinction ratio of 6 dB at wavelength of 1550 nm. The modulator has a broad operating wavelength range of 35 nm and a 3 dB bandwidth of 40.7 GHz at 2.8 V reverse bias. This compact and energy efficient modulator is a key building block for optical interconnection applications.
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