[引用][C] High-Mobility and Low-Carrier-Density Sputtered-MoS2 Film by Introducing Residual Sulfur during Low-Temperature in 3%-H2 Annealing for 3D-ICs
角嶋邦之 - Japanese Journal of Applied Physics, 2017 - cir.nii.ac.jp
High-Mobility and Low-Carrier-Density Sputtered-MoS2 Film by Introducing Residual Sulfur
during Low-Temperature in 3%-H2 Annealing for 3D-ICs | CiNii Research … High-Mobility
and Low-Carrier-Density Sputtered-MoS2 Film by Introducing Residual Sulfur during Low-Temperature
in 3%-H2 Annealing for 3D-ICs … タイトル High-Mobility and Low-Carrier-Density Sputtered-MoS2
Film by Introducing Residual Sulfur during Low-Temperature in 3%-H2 Annealing for 3D-ICs …
during Low-Temperature in 3%-H2 Annealing for 3D-ICs | CiNii Research … High-Mobility
and Low-Carrier-Density Sputtered-MoS2 Film by Introducing Residual Sulfur during Low-Temperature
in 3%-H2 Annealing for 3D-ICs … タイトル High-Mobility and Low-Carrier-Density Sputtered-MoS2
Film by Introducing Residual Sulfur during Low-Temperature in 3%-H2 Annealing for 3D-ICs …
High-mobility and low-carrier-density sputtered MoS2 film formed by introducing residual sulfur during low-temperature in 3%-H2 annealing for three-dimensional ICs
J Shimizu, T Ohashi, K Matsuura… - Japanese Journal of …, 2017 - iopscience.iop.org
We investigate the low-temperature formation of MoS 2 films by radio frequency (RF)
sputtering. This work is focused on reducing the number of sulfur defects and the improving
electrical characteristics of sputtered MoS 2 films by low-temperature annealing in various
atmospheres. 10 nm MoS 2 films were synthesized by the RF sputtering at 300 C and
followed by annealing in nitrogen or forming gas (FG: 3% hydrogen in N 2) at 200–400 C. As
a result, the compensation for sulfur defects in FG anneal process using residual sulfur gave …
sputtering. This work is focused on reducing the number of sulfur defects and the improving
electrical characteristics of sputtered MoS 2 films by low-temperature annealing in various
atmospheres. 10 nm MoS 2 films were synthesized by the RF sputtering at 300 C and
followed by annealing in nitrogen or forming gas (FG: 3% hydrogen in N 2) at 200–400 C. As
a result, the compensation for sulfur defects in FG anneal process using residual sulfur gave …
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