Growth of single crystal 3C-SiC films on large area off-axis (111) Si substrate by chemical
vapour deposition technique is here reported. The growth was conducted on off-axis Si
substrates due to the ability of the misorientation to reduce anti-phase disorder in the 3C-SiC
film. 3C-SiC films show an extremely flat surface and interface, stimulating further interest for
electrical and mechanical device applications even if a very strong bow, due to the strain
induced by the growth process, is observed. Film quality was proved to be high by several …