High-temperature operation up to 170/spl deg/C of GaInNAs-GaAs quantum-well lasers grown by chemical beam epitaxy
T Kageyama, T Miyamoto, S Makino… - IEEE Photonics …, 2000 - ieeexplore.ieee.org
IEEE Photonics Technology Letters, 2000•ieeexplore.ieee.org
High-temperature pulsed operation of GaInNAs-GaAs double-quantum-well lasers grown by
chemical beam epitaxy has been demonstrated for the first time. The lasing wavelength was
from 1.20 to 1.27 μm with different composition at room temperature. The highest lasing
operation temperature up to 170/spl deg/C and a high characteristic temperature of 270 K
were obtained for 300-μm-long lasers at 1.2 μm.
chemical beam epitaxy has been demonstrated for the first time. The lasing wavelength was
from 1.20 to 1.27 μm with different composition at room temperature. The highest lasing
operation temperature up to 170/spl deg/C and a high characteristic temperature of 270 K
were obtained for 300-μm-long lasers at 1.2 μm.
High-temperature pulsed operation of GaInNAs-GaAs double-quantum-well lasers grown by chemical beam epitaxy has been demonstrated for the first time. The lasing wavelength was from 1.20 to 1.27 μm with different composition at room temperature. The highest lasing operation temperature up to 170/spl deg/C and a high characteristic temperature of 270 K were obtained for 300-μm-long lasers at 1.2 μm.
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