High-transconductance graphene solution-gated field effect transistors
LH Hess, MV Hauf, M Seifert, F Speck, T Seyller… - Applied Physics …, 2011 - pubs.aip.org
In this work, we report on the electronic properties of solution-gated field effect transistors
(SGFETs) fabricated using large-area graphene. Devices prepared both with epitaxially
grown graphene on SiC as well as with chemical vapor deposition grown graphene on Cu
exhibit high transconductances, which are a consequence of the high mobility of charge
carriers in graphene and the large capacitance at the graphene/water interface. The
performance of graphene SGFETs, in terms of gate sensitivity, is compared to other SGFET …
(SGFETs) fabricated using large-area graphene. Devices prepared both with epitaxially
grown graphene on SiC as well as with chemical vapor deposition grown graphene on Cu
exhibit high transconductances, which are a consequence of the high mobility of charge
carriers in graphene and the large capacitance at the graphene/water interface. The
performance of graphene SGFETs, in terms of gate sensitivity, is compared to other SGFET …
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