emitting diodes using dip-coated lead-sulfide nanocrystal films as the active layer. We achieved efficient room-temperature electroluminescence using this facile fabrication scheme.
Abstract
We report on the structural and optoelectronic properties of low-cost near infrared light-emitting diodes using dip-coated lead-sulfide nanocrystal films as the active layer. We achieved efficient room-temperature electroluminescence using this facile fabrication scheme.