Highly Flexible MoS2 Thin-Film Transistors with Ion Gel Dielectrics
Nano letters, 2012•ACS Publications
Molybdenum disulfide (MoS2) thin-film transistors were fabricated with ion gel gate
dielectrics. These thin-film transistors exhibited excellent band transport with a low threshold
voltage (< 1 V), high mobility (12.5 cm2/(V· s)) and a high on/off current ratio (105).
Furthermore, the MoS2 transistors exhibited remarkably high mechanical flexibility, and no
degradation in the electrical characteristics was observed when they were significantly bent
to a curvature radius of 0.75 mm. The superior electrical performance and excellent pliability …
dielectrics. These thin-film transistors exhibited excellent band transport with a low threshold
voltage (< 1 V), high mobility (12.5 cm2/(V· s)) and a high on/off current ratio (105).
Furthermore, the MoS2 transistors exhibited remarkably high mechanical flexibility, and no
degradation in the electrical characteristics was observed when they were significantly bent
to a curvature radius of 0.75 mm. The superior electrical performance and excellent pliability …
Molybdenum disulfide (MoS2) thin-film transistors were fabricated with ion gel gate dielectrics. These thin-film transistors exhibited excellent band transport with a low threshold voltage (<1 V), high mobility (12.5 cm2/(V·s)) and a high on/off current ratio (105). Furthermore, the MoS2 transistors exhibited remarkably high mechanical flexibility, and no degradation in the electrical characteristics was observed when they were significantly bent to a curvature radius of 0.75 mm. The superior electrical performance and excellent pliability of MoS2 films make them suitable for use in large-area flexible electronics.
ACS Publications