micron waveguide platform. Modulation is achieved in the InP-based devices with a U-bend ridge-waveguide configuration for single-sided coupling to the silicon chip. 106Gb/s PAM-4 performance at varying temperatures up to 70C is demonstrated.
We demonstrate a silicon photonics hybrid O-band electro-absorption modulator in a multi-micron waveguide platform. Modulation is achieved in the InP-based devices with a U-bend ridge-waveguide configuration for single-sided coupling to the silicon chip. 106Gb/s PAM-4 performance at varying temperatures up to 70C is demonstrated.