Electric-pulse-induced resistive switching of 43 nm thick Ti O 2 thin films grown by
metalorganic chemical vapor deposition was studied by current-voltage (IV) and constant
voltage-time measurements. The resistance ratio between the two stable states of the film
constitutes approximately 1000. The allowed current level and voltage step width during the
sweep mode IV measurements influenced switching parameters, such as the switching
voltage, time before switching, and resistance values. However, it was clearly observed that …