This paper examine the impact of Double Doped Layer Gate Stack Junctionless (DDL-GSJL) MOSFET and Highly Doped Source Drain Gate Stack Junctionless (HDSDGSJL) MOSFET. We compare the performance of proposed MOSFET, with uniformly doped conventional junctionless MOSFET. The proposed MOSFET has no pn junction, only ntype non-uniform doping is used. Non-uniform doping is distributed in a horizontal and vertical manner. A high-k material (Si ₃ N ₄ ) is used as gate stack to control the leakage current and increase the I _ON /I _OFF . This paper present analog and RF figure of merits (FOM). In the paper major FOMs, output conductance (g _d ), transconductance (g _m ), cut-off frequency (f _T ), transconductance frequency product (TFP) is analyzed. The simulated results reflect that HDSD-GSJL MOSFET exhibit high transconductance, high cut-off frequency and high transconductance frequency product. The structure is designed and analyzed using ATLAS 2D TCAD tools.