Impact of solid-phase crystallization of amorphous silicon on the chemical structure of the buried Si/ZnO thin film solar cell interface
The chemical interface structure between phosphorus-doped hydrogenated amorphous
silicon and aluminum-doped zinc oxide thin films is investigated with soft x-ray emission
spectroscopy (XES) before and after solid-phase crystallization (SPC) at 600 C. In addition
to the expected SPC-induced phase transition from amorphous to polycrystalline silicon, our
XES data indicates a pronounced chemical interaction at the buried Si/ZnO interface. In
particular, we find an SPC-enhanced formation of Si–O bonds and the accumulation of Zn in …
silicon and aluminum-doped zinc oxide thin films is investigated with soft x-ray emission
spectroscopy (XES) before and after solid-phase crystallization (SPC) at 600 C. In addition
to the expected SPC-induced phase transition from amorphous to polycrystalline silicon, our
XES data indicates a pronounced chemical interaction at the buried Si/ZnO interface. In
particular, we find an SPC-enhanced formation of Si–O bonds and the accumulation of Zn in …
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